| PART |
Description |
Maker |
| WE150 |
Photo Electric Beam Sensor
|
SICK
|
| CDR-10X CDR-10X-M12 CDR-10XB CDR-30X-V CDR-30X-V-M |
M18 TUBULAR TYPE PHOTO SENSOR
|
FOTEK CONTROLS CO., LTD...
|
| LA0152CS |
Monolithic Linear IC For Ultra-small illumination Sensor Photo IC
|
Sanyo Semicon Device
|
| APDS-9002 APDS-9002-021 APDS9002 |
MINIATURE SURFACE-MOUNT AMBIENT LIGHT PHOTO SENSOR
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| ENA0975B LA0151CS |
Monolithic Linear IC For Ultra-small illumination Sensor Photo IC
|
Sanyo Semicon Device
|
| HSDL-9001 |
Analog Output Miniature Ambient Light Photo Sensor
|
AGILENT TECHNOLOGIES
|
| MIR-3306-TC11 |
SMD Type Reflective Photo Sensor Subminiature Photointerrupter
|
Unity Opto Technology
|
| Z4D-C01 |
Micro-displacement Sensor
|
Omron Electronics LLC
|
| TPS613 E006911 |
SILICON NPN EPITAXIAL PLANAR FOR PHOTO SENSOR
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| S7U4E002002 |
Micro 6 DOF Sensor Evaluation Module
|
Epson Company
|
| MRUS51S |
Micro power Built-in IC ultra-minimum MR sensor
|
NEC
|
| NJL5162K NJL5164K NJL5166K NJL5168K NJL5164K-F1 NJ |
POSITION, LINEAR SENSOR-DIFFUSE, 0.7-0.7mm, 1.60-6mA, RECTANGULAR, THROUGH HOLE MOUNT
PHOTO REFLECTOR
|
NJRC[New Japan Radio]
|
